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| HiPerFETTM Power MOSFETs IXFL 34N100 VDSS = 1000 V 30 A ID25 = ISOPLUS264 ISOPLUS264TM (Electrically Isolated Backside) Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL Weight 1.6 mm (0.063 in.) from case for 10 s 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 1000 1000 20 30 30 136 34 64 4 5 550 -55 ... +150 150 -55 ... +150 300 2500 3000 5 V V V V A A A mJ J V/ns W C C C C V~ V~ g Features G = Gate E = Emitter ISOPLUS-264TM RDS(on) = 0.28 G C E (TAB) C = Collector Tab = Collector Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages Easy assembly Space savings High power density 98932 (7/02) Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 2.5 V 5.0 V 100 nA TJ = 25C TJ = 125C 100 A 2 mA 0.28 VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Note 1 (c) 2002 IXYS All rights reserved IXFL 34N100 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 2 18 40 9200 VGS = 0 V, VDS = 25 V, f = 1 MHz 1200 300 41 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 1 (External) 65 110 30 380 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT 65 185 S pF pF pF ns ns ns ns nC nC nC 0.225 K/W 0.05 K/W ISOPLUS 264 OUTLINE g fs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK V DS = 15 V; ID = IT Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 34 136 1.3 180 330 2 8 A A V ns ns C A IF = IS,-di/dt = 100 A/s, VR = 100 V TJ = 25C TJ = 125C TJ = 25C Note: 1. Pulse width limited by TJM 2. Pulse test, t 300 s, duty cycle d 2 % 3. Test current IT = 30A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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